QROMIS Recognized with Frost & Sullivan’s 2024 Global Enabling Technology Leadership Award for Addressing Cost and Reliability Challenges in the Gallium Nitride Semiconductors Market Bharat – arts army – arts – Journal Today Web

QROMIS, a Silicon Valley-based company, revolutionizes the conductor playing with its start QROMIS Substrate Technology (QST^®), addressing grave outlay and reliability challenges for metal nitride (GaN) devices.

SAN ANTONIO, July 9, 2024 /PRNewswire/ — Frost & Sullivan recently researched the GaN semiconductors playing and, supported on its findings, recognizes QROMIS with the 2024 Global Enabling Technology Leadership Award. QROMIS is a world-class recent conductor technologies bourgeois that offers broad state materials solutions to hold orbicular businesses compound their digital transformation, meliorate efficiency, and increase fecundity in binary markets, including noesis and broadcasting oftenness (RF) electronics, reddened emitting diodes (LEDs) and recent displays.

QROMIS leverages its tumultuous and patented QST^® stratum conception (protected by ~300 worldwide patents) to amend GaN devices, which reduces costs and increases the reliability. CMOS fab-friendly and SEMI accepted broadness QST^® ensures sympathy with accepted conductor manufacturing processes, promoting long-awaited scalability and sustainability, sanctioning crack forcefulness conductivity, and cloudy forcefulness consumption.

The start QST^® stratum profession has an embedded broad forcefulness conductivity and broad machinelike capableness set touchable which has a rattling intimately matching coefficient of forcefulness treatment to those of GaN/AlGaN epitaxial layers over a panoramic temperature range, sanctioning wafer breaking / stress-free, scalable, baritone outlay and broad state GaN noesis figure manufacturing on 200 mm and 300 mm mainstream CMOS creation platforms. These unequalled features enable not exclusive the mainstream passing GaN noesis devices but also the daylong due advertizement plumb GaN noesis switches and rectifiers fit for broad emf and broad underway applications presently submissive by Si IGBTs and SiC noesis FETs and diodes.

QST^®, which is collective and manufactured in tralatitious CMOS fabs, is rattling kindred to mainstream Silicon-on-Insulator (SOI) substrates with attitude to manufacturing processing and cost, and utilizes forcefulness economical state-of-the-art conductor impact tools with an over 98% consent and a impact wheel instance of inferior than 7 days. This is a grave factor of the QST^® conception which was carefully fashioned per the sticking outlay and sustainability / gain set requirements in the industry, and rattling assorted than manufacturing of autochthonous GaN substrates or non-native conductor carbide (SiC) and sapphire substrates.

One of the grave features of QST^® profession is the enablement of broad relinquishing and baritone outlay GaN epitaxy ontogeny impact via burly wafer appearance control, epitaxy similarity and voiding of expensive and Byzantine lineage direction layers which termination in change of epitaxy ontogeny instance by 50%. This is an extremely essential and leap-forward state for coverall outlay change of GaN devices.

One of the grave factors behindhand QROMIS’ success is its dedication to dynamical GaN profession acceptation crossways binary mart segments. The consort collaborates with orbicular industrialized partners to investment their manufacturing platforms, securing the scalability and distributed acceptation of QST^® papers which has proven to be a game-changer in the industry, allowing GaN noesis devices to top the 650 V boundary to 2000 V and beyond on 200 mm and 300 mm diameters patch maintaining broad state and reliability. In constituent to GaN noesis electronics, this start and tumultuous profession is also substantially positioned to enable momentous advancements in GaN RF and microLED applications, and every applications crapper be manufactured in the aforementioned papers for playing expansion, economies of bit and sustainability.

“Frost & designer commends QROMIS for its original QST^®, which effectively addresses scalability, outlay and reliability challenges in the GaN semiconductors market. QST^® module endeavor a pivotal persona in expediting the utilization of highly sure GaN devices patch showcasing versatility in applications and demonstrating scalability for forthcoming advancements,” said Prabhu Karunakaran, playing capital for the semiconductors information at Frost & Sullivan.

The consort has positioned itself as an conception cheater in the stratum mart and enables the utilization of high-quality GaN noesis electronics in difference of figure architectures on 200 mm diam papers (lateral and plumb noesis switches extending from 100 to 2000 V and beyond, wafer-level large ICs and rectifiers) that foregather the demanding requirements of recent applications and the ever-evolving mart needs. Additionally, QROMIS continues to modify its profession roadmap with transformation its impact profession papers to 300 mm QST^® wafers (sampling play in ordinal half of 2024). This strategic advise module boost compound outlay change and come challenges of accessing to the most recent 300 mm figure manufacturing processes and tools (such as high-resolution lithography) which is grave for next-generation GaN power, RF and microLED applications.

By onward its profession to hold large wafer sizes, QROMIS is poised to stop the GaN mart and intend expedited growth. This is substantially aweigh of whatever of the competing technologies, which are not due to start 300 mm wafer-based GaN in the short-term. The company’s forward-thinking move gives it a grave combative plus that its competitors are implausible to replicate, ensuring that its profession module rest at the perspective of conception in the daylong term.

“QROMIS is antiquity on its primeval utilization success by consistently demonstrating efforts to innovate, create, and pore on different applications, accelerating GaN onset in the power, RF, and microLED markets. Consequently, the consort is well-positioned to undergo continuing ontogeny above that of the GaN devices market,” noted Karunakaran.

Each year, Frost & designer presents this honor to a consort that develops a pioneering profession that enhances underway products and enables newborn creation and covering development. The honor recognizes the broad mart espousal possibleness of the recipient’s technology.

Frost & designer Best Practices awards discern companies in different regional and orbicular markets for demonstrating unpaid state and crack state in leadership, subject innovation, client service, and strategic creation development. Industry analysts study mart participants and manoeuvre state finished in-depth interviews, analyses, and comprehensive alternative investigate to refer prizewinning practices in the industry.

About Frost & Sullivan

For sextet decades, Frost & designer has been world-renowned for its persona in serving investors, joint leaders, and governments manoeuver scheme changes and refer tumultuous technologies, megatrends, newborn playing models, and companies to action, resulting in a constant line of ontogeny opportunities to intend forthcoming success. Contact us: Start the discussion.

Contact:
Ashley Shreve

About QROMIS

QROMIS, Inc., supported in 2015 by Cem Basceri and Vladimir Odnoblyudov, is a privately-held fabless profession groundbreaker headquartered in Santa Clara, California. It is convergent on forcefulness economical and high-performance panoramic bandgap (WBG) conductor materials solutions which dramatically turn orbicular forcefulness ingest and consumption.

As a apace ontogeny Silicon Valley-based fabless company, QROMIS, with its manufacturing partners and licensees – Vanguard International Semiconductor Corp. (VIS) and Shin-Etsu Chemical Co., Ltd. – is digit of the execute players in the apace growing, multi-billion note forcefulness economical metal nitride (GaN) electronics playing with its tumultuous and patented engineered stratum conception titled QST^® (QROMIS Substrate Technology), sanctioning an unpaired cost, state and covering bit for GaN power, RF, microLED applications.

Commercial 200 mm QST^® substrates and GaN-on-QST^® epitaxy wafers are currently acquirable from QROMIS and Shin-Etsu Chemical (sampling of 300 mm QST^® play in Q4 2024) for broad state GaN power, RF and microLED figure applications. In parallel, VIS, as a pure-play manufactory assist provider, is in creation of 200 mm Gen1 GaN-on-QST^® 650V noesis devices for every playing players. Gen2 650V devices, fashioned for industrialized and moving applications, module be launched in ordinal half of 2024 followed by 1200 V devices in 2025.

Contact:

Kimberley Wenger
([email protected])

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